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| PD - 95339 IRFL024NPBF l l l l l l l Surface Mount Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating Fast Switching Fully Avalanche Rated Lead-Free HEXFET(R) Power MOSFET D VDSS = 55V RDS(on) = 0.075 G S ID = 2.8A Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The SOT-223 package is designed for surface-mount using vapor phase, infra red, or wave soldering techniques. Its unique package design allows for easy automatic pickand-place as with other SOT or SOIC packages but has the added advantage of improved thermal performance due to an enlarged tab for heatsinking. Power dissipation of 1.0W is possible in a typical surface mount application. SOT-223 Absolute Maximum Ratings Parameter ID @ TA = 25C ID @ TA = 25C ID @ TA = 70C IDM PD @TA = 25C PD @TA = 25C VGS EAS IAR EAR dv/dt TJ, TSTG Continuous Drain Current, VGS @ 10V** Continuous Drain Current, VGS @ 10V* Continuous Drain Current, VGS @ 10V* Pulsed Drain Current Power Dissipation (PCB Mount)** Power Dissipation (PCB Mount)* Linear Derating Factor (PCB Mount)* Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy* Peak Diode Recovery dv/dt Junction and Storage Temperature Range Max. 4.0 2.8 2.3 11.2 2.1 1.0 8.3 20 214 2.8 0.1 5.0 -55 to + 150 Units A W W mW/C V mJ A mJ V/ns C Thermal Resistance Parameter RJA RJA Junction-to-Amb. (PCB Mount, steady state)* Junction-to-Amb. (PCB Mount, steady state)** Typ. 90 50 Max. 120 60 Units C/W * When mounted on FR-4 board using minimum recommended footprint. ** When mounted on 1 inch square copper board, for comparison with other SMD devices. www.irf.com 1 05/28/04 IRFL024NPBF Electrical Characteristics @ TJ = 25C (unless otherwise specified) V(BR)DSS V(BR)DSS/TJ RDS(on) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Min. 55 --- --- 2.0 3.0 --- --- --- --- --- --- --- --- --- --- --- --- --- --- Typ. --- 0.056 --- --- --- --- --- --- --- --- --- --- 8.1 13.4 22.2 17.7 400 145 60 Max. Units Conditions --- V VGS = 0V, ID = 250A --- V/C Reference to 25C, ID = 1mA 0.075 VGS = 10V, I D = 2.8A 4.0 V VDS = VGS, ID = 250A --- S VDS = 25V, ID = 1.68A 25 VDS = 55V, VGS = 0V A 250 VDS = 44V, VGS = 0V, TJ = 125C 100 VGS = 20V nA -100 VGS = -20V 18.3 ID = 1.68A 3.0 nC VDS = 44V 7.7 VGS = 10V, See Fig. 6 and 9 --- VDD = 28V --- ID = 1.68A ns --- RG = 24 --- RD = 17, See Fig. 10 --- VGS = 0V --- pF VDS = 25V --- = 1.0MHz, See Fig. 5 Source-Drain Ratings and Characteristics IS ISM VSD trr Qrr ton Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse RecoveryCharge Forward Turn-On Time Min. Typ. Max. Units Conditions MOSFET symbol 2.8 showing the A integral reverse 11.2 p-n junction diode. --- --- 1.0 V TJ = 25C, IS =1.68A, VGS = 0V --- 35 53 ns TJ = 25C, IF = 1.68A --- 50 75 nC di/dt = 100A/s Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Notes: Repetitive rating; pulse width limited by max. junction temperature. ( See fig. 11 ) ISD 1.68A, di/dt 155A/s, VDD V(BR)DSS, TJ 150C Starting TJ = 25C, L = 54.7 mH RG = 25, IAS = 2.8A. (See Figure 12) Pulse width 300s; duty cycle 2%. 2 www.irf.com IRFL024NPBF 100 VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V TOP 100 I D , Drain-to-Source Current (A) I D , Drain-to-Source Current (A) VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V TOP 10 10 4.5V 1 4.5V 1 0.1 0.1 20s PULSE WIDTH TJ = 25 C 1 10 100 0.1 0.1 20s PULSE WIDTH TJ = 150 C 1 10 100 VDS , Drain-to-Source Voltage (V) VDS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics, Fig 2. Typical Output Characteristics, 100 2.0 RDS(on) , Drain-to-Source On Resistance (Normalized) ID = 2.8A I D , Drain-to-Source Current (A) 1.5 10 1.0 TJ = 150 C 0.5 TJ = 25 C 1 4.5 V DS = 25V 20s PULSE WIDTH 5.0 5.5 6.0 6.5 0.0 -60 -40 -20 VGS = 10V 0 20 40 60 80 100 120 140 160 VGS , Gate-to-Source Voltage (V) TJ , Junction Temperature ( C) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature www.irf.com 3 IRFL024NPBF 700 600 C, Capacitance (pF) 500 400 300 200 100 0 1 Ciss Coss VGS , Gate-to-Source Voltage (V) VGS = 0V, f = 1MHz Ciss = Cgs + Cgd , Cds SHORTED Crss = Cgd Coss = Cds + Cgd 20 ID = 1.68 A VDS = 44V VDS = 27V 15 10 Crss 5 0 FOR TEST CIRCUIT SEE FIGURE 13 0 5 10 15 20 10 100 VDS , Drain-to-Source Voltage (V) QG , Total Gate Charge (nC) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage 100 100 ISD , Reverse Drain Current (A) OPERATION IN THIS AREA LIMITED BY RDS(on) 10 ID , Drain Current (A) 10 100us 1ms 1 1 10ms TJ = 150 C TJ = 25 C 0.1 0.2 V GS = 0 V 0.4 0.6 0.8 1.0 1.2 0.1 0.1 TC = 25 C TJ = 150 C Single Pulse 1 10 100 1000 VSD ,Source-to-Drain Voltage (V) VDS , Drain-to-Source Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating Area 4 www.irf.com IRFL024NPBF QG V DS VGS RG 10V RD 10V QGS VG QGD D.U.T. + - VDD Charge Pulse Width 1 s Duty Factor 0.1 % Fig 9a. Basic Gate Charge Waveform Current Regulator Same Type as D.U.T. Fig 10a. Switching Time Test Circuit VDS 50K 12V .2F .3F 90% D.U.T. VGS 3mA + V - DS 10% VGS td(on) IG ID tr t d(off) tf Current Sampling Resistors Fig 9b. Gate Charge Test Circuit 1000 Fig 10b. Switching Time Waveforms Thermal Response (Z thJC ) 100 D = 0.50 0.20 0.10 10 0.05 0.02 0.01 1 SINGLE PULSE (THERMAL RESPONSE) Notes: 1. Duty factor D = t 1 / t 2 2. Peak TJ = P DM x Z thJC + TC 0.1 1 10 100 1000 P DM t1 t2 0.1 0.0001 0.001 0.01 t1, Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient www.irf.com 5 IRFL024NPBF 500 EAS , Single Pulse Avalanche Energy (mJ) TOP 400 15V BOTTOM ID 1.3A 2.2A 2.8A VDS L DRIVER 300 RG 10V D.U.T IAS tp + V - DD 200 A 0.01 100 Fig 12a. Unclamped Inductive Test Circuit 0 25 50 75 100 125 150 Starting TJ , Junction Temperature ( C) V(BR)DSS tp Fig 12c. Maximum Avalanche Energy Vs. Drain Current I AS Fig 12b. Unclamped Inductive Waveforms 6 www.irf.com IRFL024NPBF SOT-223 (TO-261AA) Package Outline Dimensions are shown in milimeters (inches) SOT-223 (TO-261AA) Part Marking Information HEXFE T PRODUCT MARKING T HIS IS AN IRF L014 PART NUMB ER INT E RNAT IONAL RE CT IF IER LOGO LOT CODE AXXXX F L014 314P A = AS S E MB LY S IT E DAT E CODE CODE (YYWW) YY = YEAR WW = WE EK P = DE S IGNAT E S LEAD-FREE PRODUCT (OPT IONAL) T OP BOT T OM www.irf.com 7 IRFL024NPBF SOT-223 (TO-261AA) Tape & Reel Information Dimensions are shown in milimeters (inches) 4.10 (.161) 3.90 (.154) 1.85 (.072) 1.65 (.065) 0.35 (.013) 0.25 (.010) TR 2.05 (.080) 1.95 (.077) 7.55 (.297) 7.45 (.294) 7.60 (.299) 7.40 (.292) 1.60 (.062) 1.50 (.059) TYP. FEED DIRECTION 12.10 (.475) 11.90 (.469) 7.10 (.279) 6.90 (.272) 16.30 (.641) 15.70 (.619) 2.30 (.090) 2.10 (.083) NOTES : 1. CONTROLLING DIMENSION: MILLIMETER. 2. OUTLINE CONFORMS TO EIA-481 & EIA-541. 3. EACH O330.00 (13.00) REEL CONTAINS 2,500 DEVICES. 13.20 (.519) 12.80 (.504) 15.40 (.607) 11.90 (.469) 4 330.00 (13.000) MAX. 50.00 (1.969) MIN. NOTES : 1. OUTLINE COMFORMS TO EIA-418-1. 2. CONTROLLING DIMENSION: MILLIMETER.. 3. DIMENSION MEASURED @ HUB. 4. INCLUDES FLANGE DISTORTION @ OUTER EDGE. 18.40 (.724) MAX. 14.40 (.566) 12.40 (.488) 4 3 Data and specifications subject to change without notice. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. 05/04 8 www.irf.com |
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